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APD
Si APD array
S8550
4 x 8 element APD array with low noise and enhanced short-wavelength sensitivity
S8550 is an APD (avalanche photodiode) array designed for short wavelength detection, featuring low noise and low terminal capacitance. S8550 also offers uniform gain and small cross-talk between each element.
Features
Applications
l High sensitivity and low noise in short wavelength region l Low terminal capacitance l Optimized for blue light detection l Uniform gain and low cross-talk variation between
each element
l Low-light-level photometry in the visible range l Detector systems combined with scintillator
s General ratings
Parameter Element size Element pitch Package Window material Rating 1.6 x 1.6 (x 32 elements) 2.3 Ceramic Epoxy resin Unit mm mm -
s Absolute maximum ratings
Parameter Operating temperature Storage temperature Symbol Topr Tstg Value -20 to +60 -20 to +80 Unit C C
s Electrical and optical characteristics (Ta=25 C)
Parameter Spectral response range Peak sensitivity wavelength Quantum efficiency Breakdown voltage Dark current Terminal capacitance Gain Symbol Condition M=50 p QE =420 nm VBR ID per 1 element, M=50 per 1 element, M=50, Ct f=10 kHz M Min. 60 Typ. 320 to 1000 600 70 400 10 10 50 Max. 500 50 Unit nm nm % V nA pF -
1
Si APD array
s Quantum efficiency vs. wavelength
100 (Typ. Ta=25 C)
S8550
s Gain vs. reverse voltage
1000 (Typ. Ta=25 C, =420 nm)
QUANTUM EFFICIENCY (%)
80
100
60
40
10
20
0 200
GAIN
400
600
800
1000
1200
1
0
100
200
300
400
WAVELENGTH (nm)
KAPDB0059EA
REVERSE VOLTAGE (V)
KAPDB0063EA
s Dimensional outline (unit: mm)
19.50 2.30 ARRAY 2 0.9 1.27 15.24
0.45
2.30 2.60 2.30
A4 B4 C4 D4 E4 F4 G4 H4
11.20
A2 B2 C2 D2 E2 F2 G2 H2 A1 B1 C1 D1 E1 F1 G1 H1
c b a PHOTOSENSITIVE SURFACE 13 12 11 10 9 8 7 6 5 4 3 2 1
ACTIVE AREA 1.6 x 1.6 (ANODE)
ARRAY 1
INDEX MARK
(0.5)
1.00
1.27 15.24
Pin No. Element No. Pin No. Element No. Pin No. Element No. Pin No. Element No. 1a CATHODE 1 6b D1 3d C3 1f A4 B1 3a 8b E1 11d G3 3f B4 C2 5a 10b F1 13d H4 5f D3 D2 7a 12b G2 2e B3 7f E3 E2 9a 1c A1 4e C4 9f F3 G1 11a 3c B2 6e D4 11f G4 H1 13a 11c F2 8e E4 13f CATHODE 2 A2 2b 13c H2 10e F4 C1 4b 1d A3 12e H3 CATHODE 1: CATHODE OF ARRAY 1 CATHODE 2: CATHODE OF ARRAY 2
KAPDA0023EB
2.6
Information furnished by HAMAMATSU is believed to be reliable. However, no responsibility is assumed for possible inaccuracies or omissions. Specifications are subject to change without notice. No patent rights are granted to any of the circuits described herein. (c)2006 Hamamatsu Photonics K.K.
HAMAMATSU PHOTONICS K.K., Solid State Division 1126-1 Ichino-cho, Higashi-ku, Hamamatsu City, 435-8558 Japan, Telephone: (81) 53-434-3311, Fax: (81) 53-434-5184, www.hamamatsu.com
U.S.A.: Hamamatsu Corporation: 360 Foothill Road, P.O.Box 6910, Bridgewater, N.J. 08807-0910, U.S.A., Telephone: (1) 908-231-0960, Fax: (1) 908-231-1218 Germany: Hamamatsu Photonics Deutschland GmbH: Arzbergerstr. 10, D-82211 Herrsching am Ammersee, Germany, Telephone: (49) 08152-3750, Fax: (49) 08152-2658 France: Hamamatsu Photonics France S.A.R.L.: 19, Rue du Saule Trapu, Parc du Moulin de Massy, 91882 Massy Cedex, France, Telephone: 33-(1) 69 53 71 00, Fax: 33-(1) 69 53 71 10 United Kingdom: Hamamatsu Photonics UK Limited: 2 Howard Court, 10 Tewin Road, Welwyn Garden City, Hertfordshire AL7 1BW, United Kingdom, Telephone: (44) 1707-294888, Fax: (44) 1707-325777 North Europe: Hamamatsu Photonics Norden AB: Smidesvagen 12, SE-171 41 Solna, Sweden, Telephone: (46) 8-509-031-00, Fax: (46) 8-509-031-01 Italy: Hamamatsu Photonics Italia S.R.L.: Strada della Moia, 1/E, 20020 Arese, (Milano), Italy, Telephone: (39) 02-935-81-733, Fax: (39) 02-935-81-741
1.27
7.62
A3 B3 C3 D3 E3 F3 G3 H3
f e d
2
Cat. No. KAPD1009E02 Jun. 2006 DN

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